Datasheet > IXFB210N20P

IXFB210N20P

更新时间： 2024-11-18 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	147K
描述
Polar HiPerFET Power MOSFET

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中文翻译

获取价格

数据手册

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IXFB210N20P 数据手册

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 200V

I_D25= 210A

IXFB210N20P

R_DS(on)≤ 10.5mΩ

t_rr

≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

PLUS264^TM

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

200

Tab

V_GSS

V_GSM

Continuous

Transient

±20

±30

G = Gate

= Drain

Tab = Drain

I_D25

I_LRMS

I_DM

T_C= 25°C (Chip Capability)

Lead Current Limit, RMS

T_C= 25°C, Pulse Width Limited by T_JM

210

160

600

= Source

I_A

E_AS

T_C= 25°C

105

Features

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

T_C= 25°C

V/ns

^zLow Package Inductance

^zAvalanche Rated

1500

^zHigh Current Handling Capability

^zLow R_DS(ON)and Q_G

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

^zFast Intrinsic Diode

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Advantages

F_C

Mounting Force

30..120/6.7..27

N/lb.

^zEasy to Mount

^zSpace Savings

^zHigh Power Density

Weight

Applications

^zDC-DC Coverters

Symbol

Test Conditions

Characteristic Values

^zBattery Chargers

(T_J= 25°C, Unless Otherwise Specified)

Min.

200

2.5

Typ.

Max.

^zSwitch-Mode and Resonant-Mode

Power Supplies

^zDC Choppers

^zAC and DC Motor Drives

^zUninterrupted Power Supplies

^zHigh Speed Power Switching

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

4.5

±200

I_DSS

μA

T_J= 150°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

10.5 mΩ

DS100018A(05/10)

12 3 4 5

中文翻译

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