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IXFB210N30P3 PDF预览

IXFB210N30P3

更新时间: 2024-11-21 21:12:31
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 143K
描述
Power Field-Effect Transistor,

IXFB210N30P3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.71Base Number Matches:1

IXFB210N30P3 数据手册

 浏览型号IXFB210N30P3的Datasheet PDF文件第2页浏览型号IXFB210N30P3的Datasheet PDF文件第3页浏览型号IXFB210N30P3的Datasheet PDF文件第4页浏览型号IXFB210N30P3的Datasheet PDF文件第5页浏览型号IXFB210N30P3的Datasheet PDF文件第6页 
Preliminary Technical Information  
Polar3TM HiPerFETTM  
Power MOSFET  
VDSS = 300V  
ID25 = 210A  
RDS(on) 14.5m  
IXFB210N30P3  
trr  
250ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
300  
300  
V
V
G
VDGR  
D
S
Tab  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G = Gate  
D
= Drain  
ID25  
TC = 25C (Chip Capability)  
210  
160  
550  
A
A
A
S
= Source  
Tab = Drain  
IL(RMS)  
IDM  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
IA  
EAS  
TC = 25C  
TC = 25C  
105  
4
A
J
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
35  
V/ns  
W
Dynamic dv/dt Rating  
Avalanche Rated  
Fast Intrinsic Rectifier  
1890  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Low RDS(on)  
Low Drain-to-Tab Capacitance  
Low Package Inductance  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
30..120/6.7..27  
10  
N/lb  
g
Advantages  
Weight  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterrupted Power Supplies  
AC Motor Drives  
(TJ = 25C Unless Otherwise Specified)  
Min.  
300  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
200 nA  
High Speed Power Switching  
Applications  
IDSS  
50 A  
TJ = 125C  
1.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • IDSS, Note 1  
14.5 m  
DS100463A(12/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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