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IXFB150N65X2 PDF预览

IXFB150N65X2

更新时间: 2024-11-02 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管栅极
页数 文件大小 规格书
6页 239K
描述
这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的dv/dt性能。 其雪崩能力也增强了器件的强度。 此外,借助快速软恢复体二极管,超级结MOSFET有助于

IXFB150N65X2 数据手册

 浏览型号IXFB150N65X2的Datasheet PDF文件第2页浏览型号IXFB150N65X2的Datasheet PDF文件第3页浏览型号IXFB150N65X2的Datasheet PDF文件第4页浏览型号IXFB150N65X2的Datasheet PDF文件第5页浏览型号IXFB150N65X2的Datasheet PDF文件第6页 
X2-Class HiPerFETTM  
Power MOSFET  
VDSS = 650V  
ID25 = 150A  
RDS(on) 17m  
IXFB150N65X2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
PLUS264TM  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
650  
650  
V
V
G
D
S
Tab  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G = Gate  
D
= Drain  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
150  
300  
A
A
S
= Source  
Tab = Drain  
IA  
EAS  
TC = 25C  
TC = 25C  
20  
4
A
J
PD  
TC = 25C  
1560  
50  
W
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Low QG  
Avalanche Rated  
Low Package Inductance  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
30..120 / 6.7..27  
10  
N/lb  
g
Advantages  
Weight  
High Power Density  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
Switch-Mode and Resonant-Mode  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
650  
V
V
3.5  
5.0  
200 nA  
IDSS  
50 A  
TJ = 125C  
5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
17 m  
© 2016 IXYS CORPORATION, All Rights Reserved  
DS100688B(03/16)  

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