Datasheet > IXFB170N30P

IXFB170N30P

更新时间： 2024-11-02 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	159K
描述
功能与特色: 优点: 应用:

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数据手册

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IXFB170N30P 数据手册

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 300V

I_D25= 170A

IXFB170N30P

R_DS(on) 18m

N-Channel Enhancement Mode

Avalanche Rated

t_rr

 200ns

Fast Intrinsic Diode

PLUS264^TM

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

300

V_GSS

V_GSM

Continuous

Transient

20

30

Tab

I_D25

I_LRMS

I_DM

T_C= 25C

Leads Current Limit, RMS

T_C= 25C, Pulse Width Limited by T_JM

170

160

500

G = Gate

= Drain

= Source

Tab = Drain

I_A

T_C= 25C

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

Features

1250

T_J

T_JM

T_stg

-55 ... +150 C

150 C

• Fast Intrinsic Diode

• Avalanche Rated

• Very Low R_thResults High Power

Dissipation

• Low R_DS(ON)

• Low Package Inductance

-55 ... +150 C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

F_C

Mounting Force

30..120 / 6.7..27

N/lb

Weight

Advantages

• Low Gate Charge Results in Simple

Drive Requirement

• Improved Gate, Avalanche and

Dynamic dv/dt Ruggedness

• High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS,V_GS= 0V

300

• DC-DC Coverters

• Battery Chargers

• Switched-Mode and Resonant-Mode

Power Supplies

• DC Choppers

• AC and DC Motor Control

• Uninterrupted Power Supplies

• High Speed Power Switching

Applications

2.5

4.5

200

I_DSS

25A

1.5 mA

T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

18 m

DS100000A(9/15)

12 3 4 5 6

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