IXFB120N50P2

更新时间： 2024-11-01 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	141K
描述
PolarP2 HiPerFET Power MOSFET

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中文翻译

获取价格

数据手册

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IXFB120N50P2 数据手册

Preliminary Technical Information

PolarP2^TMHiPerFET^TM

Power MOSFET

V_DSS= 500V

I_D25= 120A

IXFB120N50P2

R_DS(on)≤ 43mΩ

N-Channel Enhancement Mode

Avalanche Rated

t_rr

≤ 300ns

Fast Intrinsic Diode

PLUS264^TM

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

500

V_DGR

V_GSS

V_GSM

T_J= 25°C to 150°C, R_GS= 1MΩ

Continuous

Tab

± 30

± 40

Transient

G = Gate

= Drain

= Source

Tab = Drain

I_D25

I_DM

T_C= 25°C

120

300

T_C= 25°C, Pulse Width Limited by T_JM

I_A

T_C= 25°C

120

E_AS

Features

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

1890

V/ns

^zHigh Current Handling Capability

^zFast Intrinsic Diode

^zAvalanche Rated

T_J

-55 ... +150

150

°C

^zLow R_DS(ON)

T_JM

°C

^zLow Package Inductance

T_stg

-55 ... +150

300

°C

T_L

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

°C

Advantages

T_SOLD

F_C

260

°C

Plus 264^TMPackage for Clip or Spring

Mounting Force

30..120/6.7..27

N/lb.

Mounting

^zHigh Power Density

^zEasy to Mount

^zSpace Savings

Weight

Applications

^zSwitch-Mode and Resonant-Mode

Power Supplies

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

500

3.0

Typ. Max.

^zDC-DC Converters

^zLaser Drivers

^zAC and DC Motor Drives

^zRobotics and Servo Controls

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

± 200 nA

I_DSS

25 μA

T_J= 125°C

2.5 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

43 mΩ

DS100247A(7/10)

12 3 4 5

中文翻译

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