Datasheet > 驱动程序和接口 > MOSFET 驱动器> IXBD4410SI

IXBD4410SI

更新时间： 2024-11-20 22:12:15

品牌	Logo	应用领域
IXYS		驱动器
页数	文件大小	规格书
11页	705K
描述
ISOSMART Half Bridge Driver Chipset

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中文翻译

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数据手册
替代型号

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IXBD4410SI 数据手册

IXBD4410

IXBD4411

ISOSMART^TMHalf Bridge Driver Chipset

Type

Description

Package

Temperature Range

IXBD4410PI Full-Feature Low-Side Driver 16-Pin P-DIP

IXBD4411PI Full-Feature High-Side Driver 16-Pin P-DIP

-40 to +85°C

IXBD4410SI Full-Feature Low-Side Driver 16-Pin SO

IXBD4411SI Full-Feature High-Side Driver 16-Pin SO

-40 to +85°C

The IXBD4410/IXBD4411 ISOSMART

chipset is designed to control the gates

of two Power MOSFETs or Power

IGBTs that are connected in a half-

bridge (phase-leg) configuration for

driving multiple-phase motors, or used

in applications that require half-bridge

power circuits. The IXBD4410/

IXBD4411 is a full-feature chipset

consisting of two 16-Pin DIP or SO

devices interfaced and isolated by two

small-signal ferrite pulse transformers.

The small-signal transformers provide

greater than 1200 V isolation.

reference IXBD4411. They incorporate

undervoltage V_DDor V_EElockout and

overcurrent or desaturation shutdown

to protect the IGBT or Power MOSFET

devices from damage.

Features

1200 V or greater low-to-high side

isolation.

Drives Power Systems Operating on

up to 575 V AC mains

dv/dt immunity of greater than

50V/ns

The chipset provides the necessary

gate drive signals to fully control the

grounded-source low-side power

device as well as the floating-source

high-side power device. Additionally,

the IXBD4410/4411 chipset provides a

negative-going, off-state gate drive

signal for improved turn-off of IGBTs or

Power MOSFETs and a system logic-

compatible status fault output FLT to

indicate overcurrent or desaturation,

and undervoltage V or V_EE. During a

status fault, both ch^Dip^Dset keep their

respective gate drive outputs off; at

V_EE.

Proprietary low-to-high side level

translation and communication

On-chip negative gate-drive supply

to ensure Power MOSFET or IGBT

turn-off and to prevent gate noise

interference

5 V logic compatible HCMOS inputs

with hysteresis

Available in either the 16-Pin DIP or

the 16-Pin wide-body, small-outline

plastic package

20 ns switching time with 1000 pF

load; 100 ns switching time with

10,000 pF load

Even with commutating noise ambients

greaterthan 50V/nsandupto1200V

potentials, this chipset establishes

error-free two-way communications

between the system ground-reference

IXBD4410 and the inverter output-

100 ns propagation delay time

2 A peak output drive capability

Self shut-down of output in response

to over-current or short-circuit

Under-voltage and over-voltage V_DD

lockout protection

Protection from cross conduction of

the half bridge

Logic compatible fault indication

from both low and high-side driver

Applications

540 V-

z 1- or 3-Phase Motor Controls

z Switch Mode Power Supplies

(SMPS)

z Uninterruptible Power Supplies

(UPS)

z Induction Heating and Welding

Systems

z Switching Amplifiers

z General Power Conversion Circuits

IXYS reserves the right to change limits, test conditions and dimensions.

12 3 4 5 6 7...11

中文翻译

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IXBD4410SI 替代型号

型号	品牌	替代类型	描述	数据表
IR2110STRPBF	INFINEON	功能相似	HIGH AND LOW SIDE DRIVER
IR2110SPBF	INFINEON	功能相似	HIGH AND LOW SIDE DRIVER

与IXBD4410SI相关器件

型号	品牌	获取价格	描述	数据表
IXBD4411	IXYS	获取价格	ISOSMART Half Bridge Driver Chipset
IXBD4411PC	ETC	获取价格	Interface IC
IXBD4411PI	IXYS	获取价格	ISOSMART Half Bridge Driver Chipset
IXBD4411SI	IXYS	获取价格	ISOSMART Half Bridge Driver Chipset
IXBD4412PC	ETC	获取价格	Interface IC
IXBD4412PI	ETC	获取价格	Interface IC
IXBD4413PC	ETC	获取价格	Interface IC
IXBD4413PI	ETC	获取价格	Interface IC
IXBF12N300	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor, 22A I(C), 3000V V(BR)CES, N-Channel, I4PAK-3
IXBF14N300	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,

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