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IXBD4411SI PDF预览

IXBD4411SI

更新时间: 2024-11-05 22:12:15
品牌 Logo 应用领域
IXYS 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
11页 705K
描述
ISOSMART Half Bridge Driver Chipset

IXBD4411SI 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:16Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.83高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G16
JESD-609代码:e3长度:10.3 mm
功能数量:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
标称输出峰值电流:2 A封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:2.65 mm
最大供电电压:16.5 V最小供电电压:10 V
标称供电电压:15 V电源电压1-最大:20 V
电源电压1-分钟:10 V表面贴装:YES
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:35
断开时间:0.15 µs接通时间:0.15 µs
宽度:7.5 mmBase Number Matches:1

IXBD4411SI 数据手册

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IXBD4410  
IXBD4411  
ISOSMARTTM Half Bridge Driver Chipset  
Type  
Description  
Package  
Temperature Range  
IXBD4410PI Full-Feature Low-Side Driver 16-Pin P-DIP  
IXBD4411PI Full-Feature High-Side Driver 16-Pin P-DIP  
-40 to +85°C  
-40 to +85°C  
IXBD4410SI Full-Feature Low-Side Driver 16-Pin SO  
IXBD4411SI Full-Feature High-Side Driver 16-Pin SO  
-40 to +85°C  
-40 to +85°C  
The IXBD4410/IXBD4411 ISOSMART  
chipset is designed to control the gates  
of two Power MOSFETs or Power  
IGBTs that are connected in a half-  
bridge (phase-leg) configuration for  
driving multiple-phase motors, or used  
in applications that require half-bridge  
power circuits. The IXBD4410/  
IXBD4411 is a full-feature chipset  
consisting of two 16-Pin DIP or SO  
devices interfaced and isolated by two  
small-signal ferrite pulse transformers.  
The small-signal transformers provide  
greater than 1200 V isolation.  
reference IXBD4411. They incorporate  
undervoltage VDD or VEE lockout and  
overcurrent or desaturation shutdown  
to protect the IGBT or Power MOSFET  
devices from damage.  
Features  
z
z
z
z
z
1200 V or greater low-to-high side  
isolation.  
Drives Power Systems Operating on  
up to 575 V AC mains  
dv/dt immunity of greater than  
50V/ns  
The chipset provides the necessary  
gate drive signals to fully control the  
grounded-source low-side power  
device as well as the floating-source  
high-side power device. Additionally,  
the IXBD4410/4411 chipset provides a  
negative-going, off-state gate drive  
signal for improved turn-off of IGBTs or  
Power MOSFETs and a system logic-  
compatible status fault output FLT to  
indicate overcurrent or desaturation,  
and undervoltage V or VEE. During a  
status fault, both chDipDset keep their  
respective gate drive outputs off; at  
VEE.  
Proprietary low-to-high side level  
translation and communication  
On-chip negative gate-drive supply  
to ensure Power MOSFET or IGBT  
turn-off and to prevent gate noise  
interference  
z
z
5 V logic compatible HCMOS inputs  
with hysteresis  
Available in either the 16-Pin DIP or  
the 16-Pin wide-body, small-outline  
plastic package  
20 ns switching time with 1000 pF  
load; 100 ns switching time with  
10,000 pF load  
Even with commutating noise ambients  
greaterthan 50V/nsandupto1200V  
potentials, this chipset establishes  
error-free two-way communications  
between the system ground-reference  
IXBD4410 and the inverter output-  
z
z
z
z
100 ns propagation delay time  
2 A peak output drive capability  
Self shut-down of output in response  
to over-current or short-circuit  
Under-voltage and over-voltage VDD  
lockout protection  
z
z
z
Protection from cross conduction of  
the half bridge  
Logic compatible fault indication  
from both low and high-side driver  
Applications  
540 V-  
z 1- or 3-Phase Motor Controls  
z Switch Mode Power Supplies  
(SMPS)  
z Uninterruptible Power Supplies  
(UPS)  
z Induction Heating and Welding  
Systems  
z Switching Amplifiers  
z General Power Conversion Circuits  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2004 IXYS All rights reserved  
1

IXBD4411SI 替代型号

型号 品牌 替代类型 描述 数据表
IXBD4410SI IXYS

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