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IRHY57034CMPBF PDF预览

IRHY57034CMPBF

更新时间: 2024-02-09 18:50:54
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 134K
描述
Power Field-Effect Transistor, 18A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

IRHY57034CMPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, S-CSFM-P3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.72雪崩能效等级(Eas):120 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):16 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-257AA
JESD-30 代码:S-CSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):64 A认证状态:Not Qualified
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHY57034CMPBF 数据手册

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Pre-Irradiation  
IRHY57034CM, JANSR2N7483T3  
2500  
20  
15  
10  
5
V
= 0V,  
f = 1MHz  
C SHORTED  
ds  
18A  
=
I
D
GS  
C
= C + C  
iss  
gs  
gd ,  
V
V
V
= 48V  
= 30V  
= 12V  
DS  
DS  
DS  
C
= C  
rss  
gd  
C
= C + C  
gd  
2000  
1500  
1000  
500  
0
oss  
ds  
C
iss  
C
oss  
FOR TEST CIRCUIT  
SEE FIGURE 13  
C
rss  
0
0
10  
20  
30  
40  
1
10  
100  
Q , Total Gate Charge (nC)  
V
, Drain-to-Source Voltage (V)  
G
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
1000  
°
T = 150 C  
OPERATION IN THIS AREA  
J
LIMITED BY R  
(on)  
DS  
100  
10  
1
°
T = 25 C  
J
100µs  
1ms  
Tc = 25°C  
Tj = 150°C  
Single Pulse  
10ms  
V
= 0 V  
GS  
1.2  
0.1  
0.4  
0.6  
0.8  
1.0  
1.4  
1
10  
100  
1000  
V
,Source-to-Drain Voltage (V)  
SD  
V
, Drain-toSource Voltage (V)  
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
www.irf.com  
5

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