是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, S-CSFM-P3 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 雪崩能效等级(Eas): | 177 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 18 A | 最大漏源导通电阻: | 0.03 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-257AA |
JESD-30 代码: | S-CSFM-P3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 72 A | 表面贴装: | NO |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHY593034CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY593130CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY593130CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.5A I(D), 100V, 0.215ohm, 1-Element, P-Channel, Silicon, | |
IRHY593130CMSCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, | |
IRHY593230CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY593230CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.515ohm, 1-Element, P-Channel, Silicon, Met | |
IRHY597034CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY597034CMSCS | INFINEON |
获取价格 |
Rad hard, -60V, -18A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 k | |
IRHY597130CM | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY597130CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.5A I(D), 100V, 0.215ohm, 1-Element, P-Channel, Silicon, |