型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHY593130CMSCS | INFINEON |
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Power Field-Effect Transistor, | |
IRHY593230CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY593230CMPBF | INFINEON |
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Power Field-Effect Transistor, 8A I(D), 200V, 0.515ohm, 1-Element, P-Channel, Silicon, Met | |
IRHY597034CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY597034CMSCS | INFINEON |
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Rad hard, -60V, -18A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 k | |
IRHY597130CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY597130CMPBF | INFINEON |
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Power Field-Effect Transistor, 12.5A I(D), 100V, 0.215ohm, 1-Element, P-Channel, Silicon, | |
IRHY597230CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) | |
IRHY597230CMPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.515ohm, 1-Element, P-Channel, Silicon, Met | |
IRHY597230CMSCS | INFINEON |
获取价格 |
Rad hard, -200V, -8A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 k |