Datasheet > IRHY597230CMSCS

IRHY597230CMSCS

更新时间： 2024-11-19 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1161K
描述
Rad hard, -200V, -8A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QIRL

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IRHY597230CMSCS 数据手册

PD-94319C

IRHY597230CM

JANSR2N7548T3

200V, P-CHANNEL

REF: MIL-PRF-19500/712

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

THRU-HOLE (TO-257AA)

Product Summary

Part Number

IRHY597230CM

IRHY593230CM

Radiation Level RDS(on)

I_D

QPL Part Number

100 kRads(Si)

300 kRads(Si)

-8.0A JANSR2N7548T3

0.515

-8.0A

JANSF2N7548T3

TO-257AA

Description

Features

 Single Event Effect (SEE) Hardened

 Fast Switching

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

IRHY597230CM is a part of the International Rectifier

HiRel family of products. IR HiRel R5 technology

provides high performance power MOSFETs for space

applications. These devices have been characterized

for both Total Dose and Single Event Effect (SEE) with

useful performance up to LET of 80 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-

DC converters and motor controllers. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paralleling

and temperature stability of electrical parameters.

 Light Weight

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Units

Parameter

-8.0

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-5.0

-32

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

0.6

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

V_GS

E_AS

I_AR

-8.0

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-12

-55 to + 150

T_STG

°C

300 (0.063 in./1.6 mm from case for 10s)

4.3 (Typical)

Weight

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

2018-05-05

12 3 4 5 6 7 8

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IRHY67C30CMSCS	INFINEON	获取价格	Rad hard, 600V, 3.4A, single, N-channel MOSFET, R6 in a TO-257AA package - TO-257AA, 100 k
IRHY67C30CSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHY7130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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