Datasheet > IRHY597230CMSCS

IRHY597230CMSCS

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1161K
描述
Rad hard, -200V, -8A, single, P-channel MOSFET, R5 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHY597230CMSCS 数据手册

PD-94319C

IRHY597230CM

JANSR2N7548T3

200V, P-CHANNEL

REF: MIL-PRF-19500/712

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

THRU-HOLE (TO-257AA)

Product Summary

Part Number

IRHY597230CM

IRHY593230CM

Radiation Level RDS(on)

I_D

QPL Part Number

100 kRads(Si)

300 kRads(Si)

-8.0A JANSR2N7548T3

0.515

-8.0A

JANSF2N7548T3

TO-257AA

Description

Features

 Single Event Effect (SEE) Hardened

 Fast Switching

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Eyelets

IRHY597230CM is a part of the International Rectifier

HiRel family of products. IR HiRel R5 technology

provides high performance power MOSFETs for space

applications. These devices have been characterized

for both Total Dose and Single Event Effect (SEE) with

useful performance up to LET of 80 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-

DC converters and motor controllers. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paralleling

and temperature stability of electrical parameters.

 Light Weight

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Units

Parameter

-8.0

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-5.0

-32

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

0.6

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

V_GS

E_AS

I_AR

-8.0

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

-12

-55 to + 150

T_STG

°C

300 (0.063 in./1.6 mm from case for 10s)

4.3 (Typical)

Weight

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

2018-05-05

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHY597230CMSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHY63434CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE
IRHY63C30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY67434CM	INFINEON	获取价格	Simple Drive Requirements
IRHY67434CM_15	INFINEON	获取价格	Simple Drive Requirements
IRHY67C30C	INFINEON	获取价格	Power Field-Effect Transistor,
IRHY67C30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY67C30CMSCS	INFINEON	获取价格	Rad hard, 600V, 3.4A, single, N-channel MOSFET, R6 in a TO-257AA package - TO-257AA, 100 k
IRHY67C30CSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHY7130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY7230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

与IRHY597230CMSCS相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHY597230CMSCS

IRHY597230CMSCS 数据手册

与IRHY597230CMSCS相关器件

与IRHY597230CMSCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHY597230CMSCS

IRHY597230CMSCS 数据手册

与IRHY597230CMSCS相关器件

与IRHY597230CMSCS相关文章

您还可以找

您在本页遇到什么问题？