Datasheet > IRHY67C30CMSCS

IRHY67C30CMSCS

更新时间： 2024-11-19 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	389K
描述
Rad hard, 600V, 3.4A, single, N-channel MOSFET, R6 in a TO-257AA package - TO-257AA, 100 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHY67C30CMSCS 数据手册

PD-95837D

2N7599T3

IRHY67C30CM

600V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

THRU-HOLE (TO-257AA)

Product Summary

Part Number

Radiation Level RDS(on)

I_D

IRHY67C30CM 100k Rads(Si)

3.4A

3.1

IRHY63C30CM 300k Rads(Si)

3.4A

TO-257AA

Description

Features

IR HiRel R6 technology provides superior power

MOSFETs for space applications. These devices have

improved immunity to Single Event Effect (SEE) and

have been characterized for useful performance with

Linear Energy Transfer (LET) up to 90MeV/(mg/cm²).

Their combination of very low R_DS(on)and faster switching

times reduces power loss and increases power density in

today’s high speed switching applications such as DC-DC

converters and motor controllers. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, ease of paralleling and temperature

stability of electrical parameters.

 Low R_DS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Ceramic Eyelets

 Electrically Isolated

 Light Weight

 ESD Rating: Class 2 per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

3.4

2.1

I_DM

Pulsed Drain Current 

13.6

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

Linear Derating Factor

0.6

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

3.4

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

7.5

V/ns

8.1

-55 to + 150

T_STG

°C

300 (0.063 in. / 1.6mm from case for 10s)

4.3 (Typical)

For Footnotes refer to the page 2.

2016-09-21

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHY67C30CMSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHY67C30CSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHY7130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY7230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY7230CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Me
IRHY7G30CMSE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO
IRHY7G30CMSEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Met
IRHY7G30CMSESCV	INFINEON	获取价格	Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Met
IRHY8130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY8130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me
IRHY8230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

与IRHY67C30CMSCS相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

18
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

43
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

38

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHY67C30CMSCS

IRHY67C30CMSCS 数据手册

与IRHY67C30CMSCS相关器件

与IRHY67C30CMSCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHY67C30CMSCS

IRHY67C30CMSCS 数据手册

与IRHY67C30CMSCS相关器件

与IRHY67C30CMSCS相关文章

您还可以找

您在本页遇到什么问题？