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IRHY7230CMPBF

更新时间： 2024-09-24 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	106K
描述
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3

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替代型号

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IRHY7230CMPBF 数据手册

PD - 91273C

IRHY7230CM

JANSR2N7381

200V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-257AA)

REF:MIL-PRF-19500/614

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number

Radiation Level

RDS(on)

0.40Ω

QPL Part Number

IRHY7230CM 100K Rads (Si)

IRHY3230CM 300K Rads (Si)

IRHY4230CM 600K Rads (Si)

9.4A JANSR2N7381

9.4A JANSF227381

9.4A JANSG2N7381

9.4A JANSH2N7381

IRHY8230CM 1000K Rads (Si) 0.40Ω

TO-257AA

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

9.4

= 12V, T = 100°C Continuous Drain Current

6.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

150

5.5

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

7.0 (Typical )

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

12/17/01

12 3 4 5 6 7 8

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IRHY7230CMPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRHY7230CM	INFINEON	功能相似	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY8230CM	INFINEON	功能相似	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

与IRHY7230CMPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHY7G30CMSE	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO
IRHY7G30CMSEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Met
IRHY7G30CMSESCV	INFINEON	获取价格	Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Met
IRHY8130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY8130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me
IRHY8230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY9130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY9130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRHY9130CMSCS	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRHY9130CMSCSPBF	INFINEON	获取价格	暂无描述

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