Datasheet > IRHY7G30CMSESCV

IRHY7G30CMSESCV

更新时间： 2024-11-18 20:56:59

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	110K
描述
Power Field-Effect Transistor, 1.2A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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IRHY7G30CMSESCV 数据手册

PD - 93973C

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-257AA)

IRHY7G30CMSE

1000V, N-CHANNEL

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHY7G30CMSE 100K Rads (Si)

15Ω

1.2A

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

TO-257AA

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

1.2

= 12V, T = 100°C Continuous Drain Current

0.76

4.8

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

1.2

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

5.0

V/ns

dv/dt

3.0

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10sec)

4.3 (Typical)

For footnotes refer to the last page

www.irf.com

01/12/01

12 3 4 5 6 7 8

中文翻译

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与IRHY7G30CMSESCV相关器件

型号	品牌	获取价格	描述	数据表
IRHY8130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY8130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me
IRHY8230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY9130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY9130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRHY9130CMSCS	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRHY9130CMSCSPBF	INFINEON	获取价格	暂无描述
IRHY9230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY9230CMSCS	INFINEON	获取价格	Rad hard, -200V, -6.5A, single, P-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100
IRHY9230CMSCSA	INFINEON	获取价格	Rad hard, -200V, -6.5A, single, P-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100

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