Datasheet > 晶体管 > 功率场效应晶体管> IRHYB593034CM

IRHYB593034CM

更新时间： 2024-11-05 04:23:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
8页	192K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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IRHYB593034CM 数据手册

ꢁ

PD-97000

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

IRHYB597034CM

60V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

IRHYB597034CM 100K Rads (Si) 0.087Ω -20A

IRHYB593034CM 300K Rads (Si) 0.087Ω -20A

Low-Ohmic

TO-257AA (Tab-less)

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

Electrically Isolated

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-20

-13

= -12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

-80

@ T = 25°C

W/°C

0.6

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

134

-20

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

-4.9

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063in./1.6mm from case for 10s)

3.7 ( Typical )

For footnotes refer to the last page

www.irf.com

05/17/05

12 3 4 5 6 7 8

中文翻译

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与IRHYB593034CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYB593034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYB593Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB593Z30CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHYB597034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYB597034CMSCS	INFINEON	获取价格	Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Tabless Low Ohmic package
IRHYB597Z30CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597Z30CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHYB597Z30CMSCS	INFINEON	获取价格	Power Field-Effect Transistor,
IRHYB63130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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