5秒后页面跳转
IRHYB593034CM PDF预览

IRHYB593034CM

更新时间: 2024-11-21 04:23:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 192K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

IRHYB593034CM 数据手册

 浏览型号IRHYB593034CM的Datasheet PDF文件第2页浏览型号IRHYB593034CM的Datasheet PDF文件第3页浏览型号IRHYB593034CM的Datasheet PDF文件第4页浏览型号IRHYB593034CM的Datasheet PDF文件第5页浏览型号IRHYB593034CM的Datasheet PDF文件第6页浏览型号IRHYB593034CM的Datasheet PDF文件第7页 
                                                                         
PD-97000  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
IRHYB597034CM  
60V, P-CHANNEL  
TECHNOLOGY  
5
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHYB597034CM 100K Rads (Si) 0.087-20A  
IRHYB593034CM 300K Rads (Si) 0.087-20A  
Low-Ohmic  
TO-257AA (Tab-less)  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-20  
-13  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-80  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
0.6  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
134  
mJ  
A
AS  
I
-20  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
-4.9  
-55 to 150  
T
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10s)  
3.7 ( Typical )  
For footnotes refer to the last page  
www.irf.com  
1
05/17/05  

与IRHYB593034CM相关器件

型号 品牌 获取价格 描述 数据表
IRHYB593034CMPBF INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYB593Z30CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB593Z30CMPBF INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHYB597034CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597034CMPBF INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met
IRHYB597034CMSCS INFINEON

获取价格

Rad hard, -60V, -20A, single, P-channel MOSFET, R5 in a TO-257AA Tabless Low Ohmic package
IRHYB597Z30CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB597Z30CMPBF INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met
IRHYB597Z30CMSCS INFINEON

获取价格

Power Field-Effect Transistor,
IRHYB63130CM INFINEON

获取价格

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)