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IRHYB593034CMPBF PDF预览

IRHYB593034CMPBF

更新时间: 2024-11-05 12:59:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 192K
描述
Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TAB-LESS TO-257AA, 3 PIN

IRHYB593034CMPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.72雪崩能效等级(Eas):134 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.087 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):80 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHYB593034CMPBF 数据手册

 浏览型号IRHYB593034CMPBF的Datasheet PDF文件第2页浏览型号IRHYB593034CMPBF的Datasheet PDF文件第3页浏览型号IRHYB593034CMPBF的Datasheet PDF文件第4页浏览型号IRHYB593034CMPBF的Datasheet PDF文件第5页浏览型号IRHYB593034CMPBF的Datasheet PDF文件第6页浏览型号IRHYB593034CMPBF的Datasheet PDF文件第7页 
                                                                         
PD-97000  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (Low-Ohmic TO-257AA)  
IRHYB597034CM  
60V, P-CHANNEL  
TECHNOLOGY  
5
™
Product Summary  
Part Number  
Radiation Level RDS(on)  
ID  
IRHYB597034CM 100K Rads (Si) 0.087-20A  
IRHYB593034CM 300K Rads (Si) 0.087-20A  
Low-Ohmic  
TO-257AA (Tab-less)  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Eyelets  
Electrically Isolated  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C Continuous Drain Current  
-20  
-13  
D
D
GS  
GS  
C
A
I
= -12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-80  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
0.6  
V
±20  
GS  
E
Single Pulse Avalanche Energy Á  
Avalanche Current À  
134  
mJ  
A
AS  
I
-20  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
-4.9  
-55 to 150  
T
J
oC  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10s)  
3.7 ( Typical )  
For footnotes refer to the last page  
www.irf.com  
1
05/17/05  

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