Datasheet > IRHYB67130CMSCS

IRHYB67130CMSCS

更新时间： 2024-04-09 18:40:52

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	405K
描述
Rad hard, 100V, 20A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package - TO-257AA Tabless Low Ohmic, 100 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHYB67130CMSCS 数据手册

PD-95841C

IRHYB67130CM

100V, N-CHANNEL

RADIATION HARDENED

TECHNOLOGY

POWER MOSFET

THRU-HOLE (Low Ohmic TO-257AA Tabless)

Product Summary

Part Number

IRHYB67130CM

IRHYB63130CM

Radiation Level RDS(on)

I_D

100 kRads(Si)

300 kRads(Si)

20A*

0.042

Low Ohmic

TO-257AA Tabless

Description

Features

 Low RDS(on)

 Fast Switching

 Single Event Effect (SEE) Hardened

 Low Total Gate Charge

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Electrically Isolated

 Light Weight

IRHYB67130CM is part of the International Rectifier HiRel

family of products. IR HiRel R6 technology provides high

performance power MOSFETs for space applications.

These devices have been characterized for both Total

Dose and Single Event Effect (SEE) with useful

performance up to LET of 90 (MeV/(mg/cm²). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.



ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

20*

I_D@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= 12V, T_C= 100°C Continuous Drain Current

0.6

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

± 20

107

V_GS

E_AS

I_AR

7.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

5.5

V/ns

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

3.7 (Typical)

Weight

*Current is limited by package

For footnotes refer to the page 2.

2017-12-21

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRHYB67130CMSCS相关器件

型号	品牌	获取价格	描述	数据表
IRHYB67134CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB67134CMSCS	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package
IRHYB67230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB67230CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
IRHYB67230CMSCS	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package
IRHYB67230CMSCV	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
IRHYB68230CM	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRHYB9A3034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -
IRHYB9A3130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A3234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257

与IRHYB67130CMSCS相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

5
PMOS管背靠背连接：串联还是并联？
2024-06-28

5
高压电解电容的分类与选型策略
2024-06-28

7
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

12

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYB67130CMSCS

IRHYB67130CMSCS 数据手册

与IRHYB67130CMSCS相关器件

与IRHYB67130CMSCS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHYB67130CMSCS

IRHYB67130CMSCS 数据手册

与IRHYB67130CMSCS相关器件

与IRHYB67130CMSCS相关文章

您还可以找

您在本页遇到什么问题？