Datasheet > IRHYB67134CM

IRHYB67134CM

更新时间： 2024-02-23 09:11:08

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	181K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)

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中文翻译

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IRHYB67134CM 数据手册

PD-96997

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA)

IRHYB67134CM

150V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number

Radiation Level RDS(on)

IRHYB67134CM 100K Rads (Si) 0.09Ω 19A

IRHYB63134CM 300K Rads (Si) 0.09Ω 19A

Low-Ohmic

TO-257AA (Tab-less)

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²). Their combination of

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Eyelets

very low R

and faster switching times reduces

DS(on)

power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Electrically Isolated

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/°C

0.6

±20

Single Pulse Avalanche Energy Á

Avalanche Current À

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

7.8

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. /1.6 mm from case for 10s)

3.7 (Typical)

For footnotes refer to the last page

www.irf.com

05/09/05

12 3 4 5 6 7 8

中文翻译

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与IRHYB67134CM相关器件

型号	品牌	获取价格	描述	数据表
IRHYB67134CMSCS	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package
IRHYB67230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB67230CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
IRHYB67230CMSCS	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package
IRHYB67230CMSCV	INFINEON	获取价格	Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
IRHYB68230CM	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRHYB9A3034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -
IRHYB9A3130CM	INFINEON	获取价格	Rad hard, 100V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package
IRHYB9A3234CM	INFINEON	获取价格	Rad hard, 250V, 17A, single, N-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257
IRHYB9A7034CM	INFINEON	获取价格	Rad hard, 60V, 30A, single, N-channel MOSFET, R9 in a TO-257AA Tabless Low Ohmic package -

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