型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHYB597Z30CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYB597Z30CMPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 30V, 0.072ohm, 1-Element, P-Channel, Silicon, Met | |
IRHYB597Z30CMSCS | INFINEON |
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Power Field-Effect Transistor, | |
IRHYB63130CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYB63134CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYB63134CMSCS | INFINEON |
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Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package | |
IRHYB63230CM | INFINEON |
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RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA) | |
IRHYB63230CMPBF | INFINEON |
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Power Field-Effect Transistor, 16A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met | |
IRHYB63230CMSCS | INFINEON |
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Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a TO-257AA Tabless Low Ohmic package | |
IRHYB64230CM | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |