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IRHY9130CMPBF

更新时间： 2024-09-24 13:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	116K
描述
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

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IRHY9130CMPBF 数据手册

PD - 91400C

IRHY9130CM

JANSR2N7382

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (TO-257AA)

100V, P-CHANNEL

REF: MIL-PRF-19500/615

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHY9130CM 100K Rads (Si) 0.30Ω

IRHY93130CM 300K Rads (Si) 0.30Ω

QPL Part Number

-11A JANSR2N7382

-11A JANSF2N7382

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

TO-257AA

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-11

= -12V, T = 100°C Continuous Drain Current

-7.0

-44

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

150

-11

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-16

-55 to 150

Storage Temperature Range

^oC

STG

(0.063 in (1.6mm)from case for 10s)

4.3 (Typical)

Lead Temperature

Weight

300

For footnotes refer to the last page

www.irf.com

06/13/02

12 3 4 5 6 7 8

中文翻译

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IRHY9130CMPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRHY93130CM	INFINEON	功能相似	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY9130CM	INFINEON	功能相似	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

与IRHY9130CMPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHY9130CMSCS	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRHY9130CMSCSPBF	INFINEON	获取价格	暂无描述
IRHY9230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY9230CMSCS	INFINEON	获取价格	Rad hard, -200V, -6.5A, single, P-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100
IRHY9230CMSCSA	INFINEON	获取价格	Rad hard, -200V, -6.5A, single, P-channel MOSFET, R4 in a TO-257AA package - TO-257AA, 100
IRHY93130CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY93130CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Met
IRHY93230CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHYB593034CM	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB593034CMPBF	INFINEON	获取价格	Power Field-Effect Transistor, 20A I(D), 60V, 0.087ohm, 1-Element, P-Channel, Silicon, Met

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