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IRHY57034CMSCSPBF PDF预览

IRHY57034CMSCSPBF

更新时间: 2024-11-20 21:15:35
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页数 文件大小 规格书
8页 120K
描述
Power Field-Effect Transistor, 16A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

IRHY57034CMSCSPBF 数据手册

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PD - 93825  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
IRHY57034CM  
60V,N-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHY57034CM 100K Rads (Si) 0.03016A*  
IRHY53034CM 300K Rads (Si) 0.03016A*  
IRHY54034CM 600K Rads (Si) 0.03016A*  
IRHY58034CM 1000K Rads (Si) 0.03816A*  
TO-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
16*  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
16*  
64  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
120  
16  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
10  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3 (Typical)  
* Current is limited by internal wire diameter  
For footnotes refer to the last page  
www.irf.com  
1
1/26/2000  

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TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA