5秒后页面跳转
捷配首页

Datasheet > IRHY57Z30CM
IRHY57Z30CM PDF预览

IRHY57Z30CM

更新时间： 2024-11-21 03:03:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 133K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

阅读下载

中文翻译

获取价格

IRHY57Z30CM 数据手册

 浏览型号IRHY57Z30CM的Datasheet PDF文件第2页浏览型号IRHY57Z30CM的Datasheet PDF文件第3页浏览型号IRHY57Z30CM的Datasheet PDF文件第4页浏览型号IRHY57Z30CM的Datasheet PDF文件第5页浏览型号IRHY57Z30CM的Datasheet PDF文件第6页浏览型号IRHY57Z30CM的Datasheet PDF文件第7页 
                                                                             
ꢁ
PD-93824E  
IRHY57Z30CM  
JANSR2N7482T3  
30V, N-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
REF: MIL-PRF-19500/702  
TECHNOLOGY  
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
IRHY57Z30CM 100K Rads (Si) 0.03Ω  
IRHY53Z30CM 300K Rads (Si) 0.03Ω  
IRHY54Z30CM 500K Rads (Si) 0.03Ω  
ID  
QPL Part Number  
18A* JANSR2N7482T3  
18A* JANSF2N7482T3  
18A* JANSG2N7482T3  
IRHF58Z30CM 1000K Rads (Si) 0.035Ω 18A* JANSH2N7482T3  
TO-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space  
applications. These devices have been characterized  
Features:  
for Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of  
paralleling and temperature stability of electrical  
parameters.  
n Single Event Effect (SEE) Hardened  
n Ultra Low RDS(on)  
n Low Total Gate Charge  
n Simple Drive Requirements  
n Ease of Paralleling  
n Hermetically Sealed  
n Ceramic Package  
n Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
18*  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
18*  
72  
D
GS  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
177  
18  
GS  
E
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
1.7  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10 sec)  
4.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
04/25/06  
12345678

中文翻译

下载PDF

与IRHY57Z30CM相关器件

型号 品牌 获取价格 描述 数据表
IRHY58034CM ETC

获取价格

 		TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA
IRHY58130CM INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET
IRHY58230CM INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY58Z30CM ETC

获取价格

 		30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package
IRHY593034CM INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY593130CM INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY593130CMPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 12.5A I(D), 100V, 0.215ohm, 1-Element, P-Channel, Silicon,
IRHY593130CMSCS INFINEON

获取价格

 		Power Field-Effect Transistor,
IRHY593230CM INFINEON

获取价格

 		RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
IRHY593230CMPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 8A I(D), 200V, 0.515ohm, 1-Element, P-Channel, Silicon, Met

与IRHY57Z30CM相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证