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IRHY58230CM

更新时间： 2024-11-21 03:36:55
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 119K
描述
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

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中文翻译

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IRHY58230CM 数据手册

 浏览型号IRHY58230CM的Datasheet PDF文件第2页浏览型号IRHY58230CM的Datasheet PDF文件第3页浏览型号IRHY58230CM的Datasheet PDF文件第4页浏览型号IRHY58230CM的Datasheet PDF文件第5页浏览型号IRHY58230CM的Datasheet PDF文件第6页浏览型号IRHY58230CM的Datasheet PDF文件第7页 
PD - 93827A  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
IRHY57230CM  
200V,N-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHY57230CM 100K Rads (Si)  
IRHY53230CM 300K Rads (Si)  
IRHY54230CM 600K Rads (Si)  
0.21Ω 12.5A  
0.21Ω 12.5A  
0.21Ω 12.5A  
IRHY58230CM 1000K Rads (Si) 0.26Ω 12.5A  
TO-257AA  
Features:  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
12.5  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
8.0  
50  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
60  
mJ  
A
AS  
I
12.5  
7.5  
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
4.4  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3 ( Typical )  
For footnotes refer to the last page  
www.irf.com  
1
1/30/2001  
12345678

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