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IRHY58034CM PDF预览

IRHY58034CM

更新时间: 2024-11-17 23:58:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 120K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-257AA

IRHY58034CM 数据手册

 浏览型号IRHY58034CM的Datasheet PDF文件第2页浏览型号IRHY58034CM的Datasheet PDF文件第3页浏览型号IRHY58034CM的Datasheet PDF文件第4页浏览型号IRHY58034CM的Datasheet PDF文件第5页浏览型号IRHY58034CM的Datasheet PDF文件第6页浏览型号IRHY58034CM的Datasheet PDF文件第7页 
PD - 93825A  
RADIATION HARDENED  
POWER MOSFET  
THRU-HOLE (TO-257AA)  
IRHY57034CM  
60V,N-CHANNEL  
TECHNOLOGY  
R
5
™
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHY57034CM 100K Rads (Si)  
IRHY53034CM 300K Rads (Si)  
IRHY54034CM 600K Rads (Si)  
0.04Ω  
0.04Ω  
0.04Ω  
18A*  
18A*  
18A*  
IRHY58034CM 1000K Rads (Si) 0.04818A*  
TO-257AA  
International Rectifier’s R5TM technology provides  
high performance power MOSFETs for space appli-  
cations. These devices have been characterized for  
Single Event Effects (SEE) with useful performance  
up to an LET of 80 (MeV/(mg/cm2)). The combination  
of low RDS(on) and low gate charge reduces the power  
losses in switching applications such as DC to DC  
converters and motor control. These devices retain  
all of the well established advantages of MOSFETs  
such as voltage control, fast switching, ease of paral-  
leling and temperature stability of electrical param-  
eters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
18*  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
18*  
72  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
110  
18  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
10  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3 (Typical)  
* Current is limited by internal wire diameter  
For footnotes refer to the last page  
www.irf.com  
1
4/17/01  

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