Datasheet > IRG4CC77KBPBF

IRG4CC77KBPBF

更新时间： 2024-09-27 20:51:19

品牌	Logo	应用领域
英飞凌 - INFINEON		电动机控制栅晶体管
页数	文件大小	规格书
1页	120K
描述
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 6 INCH, WAFER

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IRG4CC77KBPBF 数据手册

PD-91867

IRG4CC77KB

IRG4CC77KB IGBT Die in Wafer Form

600 V

Size 7.7

Ultra-Fast Speed

Short Circuit Rated

6" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_{CE (on)}

V_(BR)CES

V_GE(th)

I_CES

Description

Guaranteed (Min/Max)

Test Conditions

I_C= 10A, T_J= 25°C, V_GE= 15V

T_J= 25°C, I_CES= 250µA, V_GE= 0V

V_GE= V_CE, T_J=25°C, I_C=1.0mA

T_J= 25°C, V_CE= 600V

Collector-to-Emitter Saturation Voltage

Colletor-to-Emitter Breakdown Voltage

Gate Threshold Voltage

4.5V Max.

600V Min.

3.0V Min., 6.5V Max.

200 µA Max.

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

I_GES

± 11 µA Max.

T_J= 25°C, V_GE= +/- 20V

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni V-Ag ( 1kA-2kA-.2.5kA )

99% Al, 1% Si (4 microns)

.443" x .443"

Wafer Diameter:

150mm, with std. < 100 > flat

.015" + / -.003"

Wafer thickness:

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5248

100 Microns

Reject Ink Dot Size

0.25mm Diameter Minimum

Consistent throughout same wafer lot

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Ink Dot Location

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : N/A

Die Outline

3/16/99

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