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IRG4IBC10UDPBF PDF预览

IRG4IBC10UDPBF

更新时间: 2024-09-27 03:24:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
11页 656K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT

IRG4IBC10UDPBF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.35
Is Samacsys:N其他特性:ULTRA FAST
外壳连接:ISOLATED最大集电极电流 (IC):6.8 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
最大降落时间(tf):210 ns门极发射器阈值电压最大值:6 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):10 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):345 ns标称接通时间 (ton):56 ns
Base Number Matches:1

IRG4IBC10UDPBF 数据手册

 浏览型号IRG4IBC10UDPBF的Datasheet PDF文件第2页浏览型号IRG4IBC10UDPBF的Datasheet PDF文件第3页浏览型号IRG4IBC10UDPBF的Datasheet PDF文件第4页浏览型号IRG4IBC10UDPBF的Datasheet PDF文件第5页浏览型号IRG4IBC10UDPBF的Datasheet PDF文件第6页浏览型号IRG4IBC10UDPBF的Datasheet PDF文件第7页 
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IRG4IBC10UDPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRG4IBC10UD INFINEON

完全替代

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4BC30UDPBF INFINEON

类似代替

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT
IGW60T120 INFINEON

功能相似

Low Loss IGBT in Trench and Fieldstop technology

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