IRG4IBC30FD

更新时间： 2024-09-26 22:05:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	225K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRG4IBC30FD 数据手册

PD- 91751A

IRG4IBC30FD

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Very Low 1.59V votage drop

• 2.5kV, 60s insulation voltage ꢀ

• 4.8 mm creapage distance to heatsink

V_CES= 600V

V_{CE(on) typ.}= 1.59V

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

@V_GE= 15V, I_C= 17A

• IGBT co-packaged with HEXFRED^TMultrafast,

n-channel

ultrasoft recovery antiparallel diodes

• Tighter parameter distribution

• Industry standard Isolated TO-220 Fullpak^TM

outline

Benefits

• Simplified assembly

• Highest efficiency and power density

• HEXFRED^TMantiparallel Diode minimizes

switching losses and EMI

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

Max.

600

Units

V_CES

_C@ T_C= 25°C

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

RMS Isolation Voltage, Terminal to Caseꢀ

Gate-to-Emitter Voltage

20.3

I_C@ T_C= 100°C

I_CM

120

I_LM

120

I_F@ T_C= 100°C

8.5

I_FM

120

Visol

2500

± 20

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

2.8

Units

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient, typical socket mount

Weight

–––

4.1

°C/W

–––

2.0 (0.07)

–––

g (oz)

www.irf.com

3/26/99

12 3 4 5 6 7...10

中文翻译

下载PDF

与IRG4IBC30FD相关器件

型号	品牌	获取价格	描述	数据表
IRG4IBC30FDPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 20.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FR
IRG4IBC30KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC30SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC30UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30W	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC30WPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC30F	INFINEON	获取价格	Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR