Datasheet > IRG4P254S

IRG4P254S

更新时间： 2024-09-26 22:32:27

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
8页	127K
描述
INSULATED GATE BIPOLAR TRANSISOR

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中文翻译

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数据手册

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IRG4P254S 数据手册

PD -91591A

IRG4P254S

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Standard: Optimized for minimum saturation

voltage and operating frequencies up to 10kHz

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

V_CES=250V

_{CE(on) typ.}= 1.32V

• Industry standard TO-247AC package

@V_GE= 15V, I_C= 55A

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• High Power density

• Lower conduction losses than similarly rated MOSFET

• Lower Gate Charge than equivalent MOSFET

• Simple Gate Drive characteristics compared to Thyristors

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

250

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

98*

I_C@ T_C= 100°C

I_CM

196

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

196

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

160

P_D@ T_C= 25°C

200

P_D@ T_C= 100°C

Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.64

–––

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

–––

6.0 (0.21)

–––

* Package limited to 70A

www.irf.com

4/15/2000

12 3 4 5 6 7 8

中文翻译

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