Datasheet > IRG4PC30FD-E

IRG4PC30FD-E

更新时间： 2024-09-27 21:21:23

品牌	Logo	应用领域
英飞凌 - INFINEON		超快软恢复二极管快速软恢复二极管局域网栅开关功率控制晶体管
页数	文件大小	规格书
10页	309K
描述
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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IRG4PC30FD-E 数据手册

PD 91460B

IRG4PC30FD

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CES= 600V

_{CE(on) typ.}= 1.59V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

@V_GE= 15V, I_C= 17A

n-channel

• Industry standard TO-247AC package

Benefits

• Generation -4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

TO-247AC

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

120

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

120

I_F@ T_C= 100°C

I_FM

120

V_GE

± 20

100

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.2

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

–––

2.5

0.24

–––

°C/W

g (oz)

–––

6 (0.21)

–––

www.irf.com

12/30/00

12 3 4 5 6 7...10

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与IRG4PC30FD-E相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC30FDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT
IRG4PC30F-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30F-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30FPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT
IRG4PC30K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
IRG4PC30KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PC30KD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30KD-EPBF	INFINEON	获取价格	28A, 600V, N-CHANNEL IGBT, TO-247AD, TO-247AD, 3 PIN
IRG4PC30KDPBF	INFINEON	获取价格	INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC30K-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,

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