IRG4PC30S

更新时间： 2024-09-26 22:32:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	122K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)

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中文翻译

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数据手册
替代型号

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IRG4PC30S 数据手册

PD - 91586A

IRG4PC30S

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

_CES= 600V

_{CE(on) typ.}= 1.4V

• Industry standard TO-247AC package

@V_GE= 15V, I_C= 18A

n-channel

Benefits

• Generation 4 IGBTs offer highest efficiency available

• IGBTs optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBTs

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

100

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.2

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

–––

6 (0.21)

–––

www.irf.com

4/15/2000

12 3 4 5 6 7 8

中文翻译

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IRG4PC30S 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC30SPBF	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

与IRG4PC30S相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC30S-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30S-EPBF	INFINEON	获取价格	暂无描述
IRG4PC30SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
IRG4PC30U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
IRG4PC30UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PC30UD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC30U-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30U-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30UPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT