Datasheet > IRG4PC40KD-E

IRG4PC40KD-E

更新时间： 2024-09-27 18:34:23

品牌	Logo	应用领域
英飞凌 - INFINEON		超快软恢复二极管快速软恢复二极管局域网电动机控制栅晶体管
页数	文件大小	规格书
10页	281K
描述
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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IRG4PC40KD-E 数据手册

PD -91584A

IRG4PC40KD

Short Circuit Rated

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

UltraFast IGBT

• Short Circuit Rated UltraFast: Optimized for

high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10µs @ 125°C, V_GE= 15V

• Generation 4 IGBT design provides tighter

V_CES= 600V

_{CE(on) typ.}= 2.1V

parameter distribution and higher efficiency than

Generation 3

@V_GE= 15V, I_C= 25A

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

n-channel

bridge configurations

• Industry standard TO-247AC package

Benefits

• Generation 4 IGBTs offer highest efficiencies

available

• HEXFRED diodes optimized for performance with

IGBTs. Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for

equivalent industry-standard Generation 3 IR IGBTs

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 100°C

I_CM

I_LM

I_F@ T_C= 100°C

I_FM

t_sc

µs

V_GE

± 20

P_D@ T_C= 25°C

Maximum Power Dissipation

160

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

Max.

0.77

1.7

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

–––

°C/W

0.24

–––

6 (0.21)

–––

g (oz)

www.irf.com

4/15/2000

12 3 4 5 6 7...10

中文翻译

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与IRG4PC40KD-E相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC40KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC40KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
IRG4PC40MD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4PC40S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)
IRG4PC40SD	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4PC40SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
IRG4PC40U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
IRG4PC40UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)ty
IRG4PC40UD2	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRG4PC40UD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,

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