Datasheet > IRG4PC50KD-E

IRG4PC50KD-E

更新时间： 2024-09-29 19:43:03

品牌	Logo	应用领域
英飞凌 - INFINEON		超快软恢复二极管快速软恢复二极管局域网电动机控制栅晶体管
页数	文件大小	规格书
9页	121K
描述
Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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IRG4PC50KD-E 数据手册

PD - 91583B

IRG4PC50K

Short Circuit Rated

UltraFast IGBT

INSULATEDGATEBIPOLARTRANSISTOR

Features

• High short circuit rating optimized for motor control,

t_sc=10µs, @360V V_CE(start), T_J= 125°C,

V_GE= 15V

V_CES= 600V

• Combines low conduction losses with high

switching speed

_{CE(on) typ.}= 1.84V

• Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

@V_GE= 15V, I_C= 30A

n-channel

Benefits

• As a Freewheeling Diode we recommend our

HEXFRED^TMultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

• Latest generation 4 IGBTs offer highest power

density motor controls possible

• This part replaces the IRGPC50K and IRGPC50M

devices

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

104

I_LM

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

104

t_sc

µs

V_GE

±20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

170

P_D@ T_C= 25°C

200

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.64

–––

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

–––

6 (0.21)

–––

www.irf.com

4/15/2000

12 3 4 5 6 7...9

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