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IRG4PC40UD-EPBF PDF预览

IRG4PC40UD-EPBF

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管双极型晶体管功率控制双极性晶体管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
11页 3089K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRG4PC40UD-EPBF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.37
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):110 ns
门极发射器阈值电压最大值:6 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):160 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):294 ns
标称接通时间 (ton):48 nsBase Number Matches:1

IRG4PC40UD-EPBF 数据手册

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PD - 94937  
IRG4PC40UDPbF  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
UltraFast: Optimized for high operating frequencies 8-40 kHz  
in hard switching, >200 kHz in resonant mode  
Generation 4 IGBT design provides tighter parameter  
distribution and higher efficiency than Generation 3  
IGBT co-packaged with HEXFREDTM ultrafast, ultra-  
soft recovery anti-parallel diodes for use in bridge  
configurations  
Industry standard TO-247AC package  
Lead-Free  
Benefits  
Generation -4 IGBT’s offer highest efficiencies available  
IGBT’s optimized for specific application conditions  
HEXFRED diodes optimized for performance with IGBT’sꢀ  
Minimized recovery characteristics require less/no snubbing  
Designed to be a “drop-in” replacement for equivalent  
industry-standard Generation 3 IR IGBT’s  
www.irf.com  
1
1/12/04  

IRG4PC40UD-EPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRG4PC40UDPBF INFINEON

类似代替

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IKW20N60T INFINEON

类似代替

IGBT in Trench and Fieldstop technology with soft,fast recovery anti-parallel EmCon HE dio

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