Datasheet > 晶体管 > IGBT> IRG4PC50U

IRG4PC50U

更新时间： 2024-11-01 22:32:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	149K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

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中文翻译

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数据手册
替代型号

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IRG4PC50U 数据手册

PD 91470F

IRG4PC50U

UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

V_CES=600V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

_{CE(on) typ.}= 1.65V

@V_GE= 15V, I_C= 27A

• Industry standard TO-247AC package

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

220

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

220

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

200

P_D@ T_C= 100°C

Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

----

Max.

0.64

----

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

----

6 (0.21)

----

g (oz)

www.irf.com

12/30/00

12 3 4 5 6 7 8

中文翻译

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IRG4PC50U 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50UPBF	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

与IRG4PC50U相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC50UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PC50UD-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC50UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UHR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3
IRG4PC50UPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
IRG4PC50W	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
IRG4PC50WPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC60F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC60F-EP	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC60F-P	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT