Datasheet > 晶体管 > IGBT> IRG4PC50FD

IRG4PC50FD

更新时间： 2024-11-01 22:32:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	214K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

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IRG4PC50FD 数据手册

PD 91469B

IRG4PC50FD

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CES= 600V

_{CE(on) typ.}= 1.45V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

@V_GE= 15V, I_C= 39A

n-channel

• Industry standard TO-247AC package

Benefits

• Generation -4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

TO-247AC

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

280

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

280

I_F@ T_C= 100°C

I_FM

280

V_GE

± 20

200

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Min.

------

-----

Typ.

------

0.24

Max.

0.64

0.83

------

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

°C/W

-----

------

6 (0.21)

------

g (oz)

www.irf.com

12/30/00

12 3 4 5 6 7...10

中文翻译

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与IRG4PC50FD相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC50FD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC50FD-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC50FDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50F-EPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50FPBF	INFINEON	获取价格	Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)
IRG4PC50KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PC50KD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC50KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50KPBF	INFINEON	获取价格	Short Circuit Rated UltraFast IGBT

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