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IRG4PC50UD-EPBF

更新时间： 2024-11-02 21:21:51
品牌 Logo 应用领域
英飞凌 - INFINEON 超快软恢复二极管快速软恢复二极管局域网栅功率控制晶体管
页数 文件大小 规格书
11页 216K
描述
Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN

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中文翻译

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IRG4PC50UD-EPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
风险等级：5.79Samacsys Description：International Rectifier IRG4PC50UD-EPBF, IGBT Transistor, 55 A 600 V, 8 → 30kHz, 3-Pin TO-247AC

IRG4PC50UD-EPBF 数据手册

 浏览型号IRG4PC50UD-EPBF的Datasheet PDF文件第2页浏览型号IRG4PC50UD-EPBF的Datasheet PDF文件第3页浏览型号IRG4PC50UD-EPBF的Datasheet PDF文件第4页浏览型号IRG4PC50UD-EPBF的Datasheet PDF文件第5页浏览型号IRG4PC50UD-EPBF的Datasheet PDF文件第6页浏览型号IRG4PC50UD-EPBF的Datasheet PDF文件第7页 
PD91471B  
IRG4PC50UD  
UltraFast CoPack IGBT  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
C
• UltraFast: Optimized for high operating  
frequencies 8-40 kHz in hard switching, >200  
kHz in resonant mode  
VCES = 600V  
V
CE(on) typ. = 1.65V  
• Generation 4 IGBT design provides tighter  
G
parameter distribution and higher efficiency than  
Generation 3  
• IGBT co-packaged with HEXFREDTM ultrafast,  
ultra-soft-recovery anti-parallel diodes for use in  
bridge configurations  
@VGE = 15V, IC = 27A  
E
n-channel  
• Industry standard TO-247AC package  
Benefits  
• Generation 4 IGBT's offer highest efficiencies  
available  
• IGBT's optimized for specific application conditions  
• HEXFRED diodes optimized for performance with  
IGBT's . Minimized recovery characteristics require  
less/no snubbing  
• Designed to be a "drop-in" replacement for equivalent  
industry-standard Generation 3 IR IGBT's  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
V
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
IC @ TC = 25°C  
55  
IC @ TC = 100°C  
27  
ICM  
220  
A
ILM  
220  
IF @ TC = 100°C  
25  
IFM  
220  
VGE  
± 20  
200  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
W
P
D @ TC = 100°C Maximum Power Dissipation  
78  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1 N•m)  
Thermal Resistance  
Parameter  
Min.  
------  
------  
------  
-----  
Typ.  
------  
Max.  
0.64  
0.83  
------  
40  
Units  
RθJC  
RθJC  
RθCS  
RθJA  
Wt  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
------  
°C/W  
0.24  
-----  
------  
6 (0.21)  
------  
g (oz)  
www.irf.com  
1
12/30/00  
1234567...11

中文翻译

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IRG4PC50UD-EPBF 替代型号

型号 品牌 替代类型 描述 数据表
IGW30N60T INFINEON

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 Low Loss IGBT in TrenchStop and Fieldstop technology
IRG4PC50UDPBF INFINEON

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 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IKW30N60T INFINEON

类似代替

 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-p

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