Datasheet > 晶体管 > IGBT> IRG4PC50FDPBF

IRG4PC50FDPBF

更新时间： 2024-02-14 13:57:56

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管功率控制栅局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
11页	759K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册
替代型号

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IRG4PC50FDPBF 数据手册

PD -95225

IRG4PC50FDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Fast CoPack IGBT

Features

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

V_CES= 600V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

_{CE(on) typ.}= 1.45V

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

@V_GE= 15V, I_C= 39A

n-channel

• Industry standard TO-247AC package

• Lead-Free

Benefits

• Generation -4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for

equivalent industry-standard Generation 3 IR IGBT's

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

280

I_LM

280

I_F@ T_C= 100°C

I_FM

280

V_GE

± 20

200

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

------

-----

Typ.

------

Max.

0.64

0.83

------

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

------

°C/W

0.24

-----

------

6 (0.21)

------

g (oz)

04/29/04

12 3 4 5 6 7...11

中文翻译

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IRG4PC50FDPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50FPBF	INFINEON	完全替代	Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50WPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50UDPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IRG4PC50FDPBF相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC50F-EPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50FPBF	INFINEON	获取价格	Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)
IRG4PC50KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PC50KD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC50KDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50KPBF	INFINEON	获取价格	Short Circuit Rated UltraFast IGBT
IRG4PC50S	INFINEON	获取价格	INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A)
IRG4PC50SDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50S-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,

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