Datasheet > 晶体管 > IGBT> IRG4PC50S-P

IRG4PC50S-P

更新时间： 2024-09-29 04:44:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管双极性晶体管栅
页数	文件大小	规格书
9页	147K
描述
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

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中文翻译

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数据手册

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IRG4PC50S-P 数据手册

PD - 91581B

IRG4PC50S-P

Standard Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

• Generation 4 IGBT design provides tighter

V_CES= 600V

parameter distribution and higher efficiency than

Generation 3

V_{CE(on) typ.}= 1.28V

• Industry standard TO-247AC package

• Surface Mountable

@V_GE= 15V, I_C= 41A

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Surface Mountable

TO-247

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

140

± 20

I_LM

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 25°C

200

P_D@ T_C= 100°C

T_J

-55 to + 150

T_STG

Storage Temperature Range

Max Reflow Temperature

°C

225

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

0.64

–––

Units

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

Junction-to-Ambient, typical socket mount

www.irf.com

05/14/02

12 3 4 5 6 7...9

中文翻译

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与IRG4PC50S-P相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC50SPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50S-PPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE
IRG4PC50U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)
IRG4PC50UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PC50UD-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC50UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC50UHR	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3
IRG4PC50UPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
IRG4PC50W	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
IRG4PC50WPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR