5秒后页面跳转
IRG4PC40S PDF预览

IRG4PC40S

更新时间: 2024-11-01 22:32:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
8页 145K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A)

IRG4PC40S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
风险等级:5.01其他特性:STANDARD SPEED
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:600 V配置:SINGLE
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1940 ns
标称接通时间 (ton):44 nsBase Number Matches:1

IRG4PC40S 数据手册

 浏览型号IRG4PC40S的Datasheet PDF文件第2页浏览型号IRG4PC40S的Datasheet PDF文件第3页浏览型号IRG4PC40S的Datasheet PDF文件第4页浏览型号IRG4PC40S的Datasheet PDF文件第5页浏览型号IRG4PC40S的Datasheet PDF文件第6页浏览型号IRG4PC40S的Datasheet PDF文件第7页 
PD 91465B  
IRG4PC40S  
Standard Speed IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
C
Features  
Standard: Optimized for minimum saturation  
voltage and low operating frequencies ( < 1kHz)  
Generation 4 IGBT design provides tighter  
parameter distribution and higher efficiency than  
Generation 3  
VCES =600V  
V
CE(on) typ. = 1.32V  
G
Industry standard TO-247AC package  
@VGE = 15V, IC = 31A  
E
n-channel  
Benefits  
Generation 4 IGBT's offer highest efficiency available  
IGBT's optimized for specified application conditions  
Designed to be a "drop-in" replacement for equivalent  
industry-standard Generation 3 IR IGBT's  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
600  
V
IC @ TC = 25°C  
60  
IC @ TC = 100°C  
31  
120  
A
ICM  
ILM  
Clamped Inductive Load Current ‚  
Gate-to-Emitter Voltage  
120  
VGE  
± 20  
V
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
15  
mJ  
PD @ TC = 25°C  
160  
W
PD @ TC = 100°C  
Maximum Power Dissipation  
65  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw.  
300 (0.063 in. (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.77  
–––  
40  
Units  
°C/W  
RθJC  
RθCS  
RθJA  
Wt  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient, typical socket mount  
Weight  
0.24  
–––  
6 (0.21)  
–––  
g (oz)  
www.irf.com  
1
12/30/00  

与IRG4PC40S相关器件

型号 品牌 获取价格 描述 数据表
IRG4PC40SD INFINEON

获取价格

Fit Rate / Equivalent Device Hours
IRG4PC40SPBF INFINEON

获取价格

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
IRG4PC40U INFINEON

获取价格

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
IRG4PC40UD INFINEON

获取价格

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE( Vces=600V, Vce(on)ty
IRG4PC40UD2 INFINEON

获取价格

Fit Rate / Equivalent Device Hours
IRG4PC40UD-E INFINEON

获取价格

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC40UD-EPBF INFINEON

获取价格

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC40UDPBF INFINEON

获取价格

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC40U-E INFINEON

获取价格

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC40U-EPBF INFINEON

获取价格

暂无描述