IRG4PC30W

更新时间： 2024-09-26 22:32:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制瞄准线栅局域网
页数	文件大小	规格书
8页	125K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)

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中文翻译

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IRG4PC30W 数据手册

PD - 91628A

IRG4PC30W

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

V_CES=600V

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50% reduction of Eoff parameter

_{CE(on) max.}= 2.70V

@V_GE= 15V, I_C= 12A

• Low IGBT conduction losses

n-channel

• Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

Benefits

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

180

P_D@ T_C= 25°C

100

P_D@ T_C= 100°C

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.2

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

–––

6 (0.21)

–––

g (oz)

www.irf.com

4/15/2000

12 3 4 5 6 7 8

中文翻译

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与IRG4PC30W相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC30W-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-3P, 3
IRG4PC30W-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-3P, 3
IRG4PC30WPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
IRG4PC40FD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PC40FD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 49A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC40FDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC40FPBF	INFINEON	获取价格	INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
IRG4PC40K	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)

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