IRG4PC30UD

更新时间： 2024-09-26 22:13:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管功率控制双极性晶体管栅局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
10页	213K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)

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IRG4PC30UD 数据手册

PD 91462B

IRG4PC30UD

UltraFast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

• UltraFast: Optimized for high operating

frequencies 8-40 kHz in hard switching, >200

kHz in resonant mode

V_CES= 600V

_{CE(on) typ.}= 1.95V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

@V_GE= 15V, I_C= 12A

n-channel

• Industry standard TO-247AC package

Benefits

• Generation -4 IGBT's offer highest efficiencies

available

• IGBT's optimized for specific application conditions

• HEXFRED diodes optimized for performance with

IGBT's . Minimized recovery characteristics require

less/no snubbing

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Absolute Maximum Ratings

TO-247AC

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

I_FM

V_GE

± 20

_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

100

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Min.

------

-----

Typ.

------

0.24

Max.

1.2

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

2.5

°C/W

------

-----

------

6 (0.21)

------

g (oz)

www.irf.com

12/30/00

12 3 4 5 6 7...10

中文翻译

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与IRG4PC30UD相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC30UD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC30U-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30U-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30UPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
IRG4PC30W	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
IRG4PC30W-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-3P, 3
IRG4PC30W-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-3P, 3
IRG4PC30WPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC40	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)

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