IRG4PC30K

更新时间： 2024-09-26 22:32:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	123K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

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中文翻译

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数据手册
替代型号

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IRG4PC30K 数据手册

PD - 91588A

IRG4PC30K

Short Circuit Rated

UltraFast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• High short circuit rating optimized for motor control,

V_CES= 600V

_sc=10µs, @360V V_CE(start), T_J= 125°C,

_GE= 15V

• Combines low conduction losses with high

switching speed

_{CE(on) typ.}= 2.21V

• Latest generation design provides tighter parameter

distribution and higher efficiency than previous

generations

@V_GE= 15V, I_C= 16A

n-channel

Benefits

• As a Freewheeling Diode we recommend our

HEXFRED^TMultrafast, ultrasoft recovery diodes for

minimum EMI / Noise and switching losses in the

Diode and IGBT

• Latest generation 4 IGBTs offer highest power

density motor controls possible

• This part replaces the IRGPC30K and IRGPC30M

devices

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

600

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

t_sc

µs

V_GE

±20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

260

P_D@ T_C= 25°C

100

P_D@ T_C= 100°C

T_J

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

1.2

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient, typical socket mount

Weight

0.24

–––

6 (0.21)

–––

www.irf.com

4/15/2000

12 3 4 5 6 7 8

中文翻译

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IRG4PC30K 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC30KPBF	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR

与IRG4PC30K相关器件

型号	品牌	获取价格	描述	数据表
IRG4PC30KD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ
IRG4PC30KD-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30KD-EPBF	INFINEON	获取价格	28A, 600V, N-CHANNEL IGBT, TO-247AD, TO-247AD, 3 PIN
IRG4PC30KDPBF	INFINEON	获取价格	INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4PC30K-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30K-EPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30KPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC30S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
IRG4PC30S-E	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IRG4PC30S-EPBF	INFINEON	获取价格	暂无描述

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