是否Rohs认证: | 符合 | 生命周期: | End Of Life |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.26 |
Is Samacsys: | N | 其他特性: | ULTRA FAST SOFT RECOVERY |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 17 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 130 ns | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 18 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 300 ns |
标称接通时间 (ton): | 62 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRG4IBC30UD | INFINEON |
完全替代 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG4IBC30W | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4IBC30WPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4MC30F | INFINEON |
获取价格 |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4MC30FPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC | |
IRG4MC40U | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4MC40UPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC | |
IRG4MC50F | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4MC50U | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4P254S | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISOR | |
IRG4P254S-EPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 250V V(BR)CES, N-Channel, TO-247AD |