是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | HERMETIC SEALED, TO-254AA, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.05 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 28 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最大降落时间(tf): | 550 ns | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | S-XSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 75 W | 认证状态: | Not Qualified |
最大上升时间(tr): | 30 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | PIN/PEG | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG4MC30FPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC | |
IRG4MC40U | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4MC40UPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC | |
IRG4MC50F | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4MC50U | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4P254S | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISOR | |
IRG4P254S-EPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 70A I(C), 250V V(BR)CES, N-Channel, TO-247AD | |
IRG4P254SPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4PC20UPBF | INFINEON |
获取价格 |
UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A ) | |
IRG4PC30 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |