Datasheet > IRG4MC40UPBF

IRG4MC40UPBF

更新时间： 2024-09-27 21:08:35

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网栅功率控制晶体管
页数	文件大小	规格书
8页	141K
描述
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

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IRG4MC40UPBF 数据手册

PD -94305D

IRG4MC40U

UltraFast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Electrically Isolated and Hermetically Sealed

• Simple Drive Requirements

_CES= 600V

• Latch-proof

• UltraFast Speed Operation 8kHz - 40kHz,

> 200kHz in Resonent Mode

V_{CE(on) max}= 2.1V

• High Operating Frequency

• Switching-loss Rating includes all "tail" Losses

• Ceramic Eyelets

@V_GE= 15V, I_C= 20A

n-channel

Benefits

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

IR Hi-Rel Generation 3 IGBT's

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

TO-254AA

Absolute Maximum Ratings

Parameter

Max.

600

35*

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current ➀

Clamped Inductive Load Current ➀

Gate-to-Emitter Voltage

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

140

± 20

125

I_LM

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063in./1.6mm from case for 10s)

9.3 (typical)

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

°C/W

Junction-to-Case

—

1.1

thJC

www.irf.com

02/08/02

12 3 4 5 6 7 8

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