IRG4IBC30KDPBF

更新时间： 2024-09-27 03:43:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
11页	344K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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IRG4IBC30KDPBF 数据手册

PD -95597

IRG4IBC30KDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

Short Circuit Rated

UltraFast IGBT

ULTRAFAST SOFT RECOVERY DIODE

Features

High switching speed optimized for up to 25kHz

with low V_CE(on)

V_CES= 600V

Short Circuit Rating 10µs @ 125°C, V_GE= 15V

Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

V_{CE(on) typ.}= 2.21V

@V_GE= 15V, I_C= 9.2A

IGBT co-packaged with HEXFRED^TMultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

Industry standard TO-220 FULLPAK

Lead-Free

n-channel

Benefits

Generation 4 IGBTs offer highest efficiencies available

maximizing the power density of the system

IGBT's optimized for specific application conditions

HEXFRED^TMdiodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise EMI

Designed to exceed the power handling capability of

equivalent industry-standard IGBT

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

_C@ T_C= 25°C

Collector-to-Emitter Voltage

600

Continuous Collector Current

Pulsed Collector Current ꢀ

Clamped Inductive Load Current ꢀ

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

I_C@ T_C= 100°C

9.2

I_CM

I_LM

I_F@ T_C= 100°C

9.2

I_FM

t_sc

µs

V_ISOL

RMS Isolation Voltage, Terminal to Case, t = 1 min

Gate-to-Emitter Voltage

2500

± 20

V_GE

P_D@ T_C= 25°C

Maximum Power Dissipation

°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

300 (0.063 in. (1.6mm) from case)

10 lbfin (1.1 Nm)

Thermal Resistance

Parameter

Typ.

Max.

2.8

Units

°C/W

g (oz)

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Junction-to-Ambient, typical socket mount

Weight

3.7

2.0 (0.07)

www.irf.com

7/27/04

12 3 4 5 6 7...11

中文翻译

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IRG4IBC30KDPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRG4IBC30KD	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IRG4IBC30KDPBF相关器件

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IRG4IBC30UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30UDPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRG4IBC30W	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4IBC30WPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC30F	INFINEON	获取价格	Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC30FPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC
IRG4MC40U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRG4MC40UPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC

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