Datasheet > IRG4IBC20W_04

IRG4IBC20W_04

更新时间： 2024-09-27 03:43:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
8页	215K
描述
INSULATED GATE BIPOLAR TRANSISTOR

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中文翻译

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数据手册

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IRG4IBC20W_04 数据手册

PD-95636

IRG4IBC20WPbF

INSULATED GATE BIPOLAR TRANSISTOR

Features

Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

• 2.5kV, 60s insulation voltage

V_CES=600V

Industry-benchmark switching losses improve

efficiency of all power supply topologies

50% reduction of Eoff parameter

Low IGBT conduction losses

Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

• Industry standard Isolated TO-220 Fullpak^TM

outline

V_{CE(on) typ.}= 2.16V

@V_GE= 15V, I_C= 6.5A

n-channel

Lead-Free

Benefits

Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

600

I_C@ T_C= 25°C

11.8

I_C@ T_C= 100°C

6.2

I_CM

I_LM

Clamped Inductive Load Current

Gate-to-Emitter Voltage

V_GE

± 20

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

200

P_D@ T_C= 25°C

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to + 150

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw.

300 (0.063 in. (1.6mm) from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Typ.

–––

Max.

3.7

Units

R_θJC

R_θJA

Junction-to-Case - IGBT

Junction-to-Ambient, typical socket mount

Weight

–––

°C/W

2.0 (0.07)

–––

g (oz)

www.irf.com

07/23/04

12 3 4 5 6 7 8

中文翻译

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