是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.26 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 14.3 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 220 ns | 门极发射器阈值电压最大值: | 6 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 34 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 610 ns | 标称接通时间 (ton): | 63 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRG4IBC20FD | INFINEON |
完全替代 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRG4IBC20KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4IBC20KDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4IBC20UD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4IBC20UDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4IBC20W | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4IBC20W_04 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4IBC20WPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4IBC30F | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4IBC30FD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRG4IBC30FDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 20.3A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FR |