PD-91773
IRG4CC81UB
IRG4CC81UB IGBT Die in Wafer Form
C
600 V
Size 8.1
Ultra-Fast Speed
6" Wafer
G
E
Electrical Characteristics ( Wafer Form )
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
Description
Guaranteed (Min/Max)
Test Conditions
IC = 10A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 250µA, VGE = 0V
VGE = VCE , TJ =25°C, IC =250µA
TJ = 25°C, VCE = 600V
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
4.5V Max.
600V Min.
3.0V Min., 6.0V Max.
300 µA Max.
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
IGES
± 11 µA Max.
TJ = 25°C, VGE = +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Cr-Ni / V-Ag ( 1kA-2kA-.2.5kA )
99% Al, 1% Si (4 microns)
0.523" x 0.523"
Wafer Diameter:
150mm, with std. < 100 > flat
.015" + / -.003"
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5249
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Ink Dot Location
Recommended Storage Environment:
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : GA200TS60U
Die Outline
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
2. CONTROLLING DIMENSION: (INCH).
3. LETTER DESIGNATION:
S = SOURCE
G = GATE
SK = SOURCE KELVIN
IS = CURRENT SENSE
4. DIMENSIONAL TOLERANCES:
BONDING PADS: < 0.635 TOLERANCE = +/- 0.013
WIDTH
&
LENGTH
< (.0250) TOLERANCE = +/- (.0005)
< 0.635 TOLERANCE = +/- 0.025
< (.0250) TOLERANCE = +/- (.0010)
OVERALL DIE: < 1.270 TOLERANCE = +/- 0.102
WIDTH
&
LENGTH
< (.050) TOLERANCE = +/- (.004)
< 0.635 TOLERANCE = +/- 0.203
< (.050) TOLERANCE = +/- (.008)
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
10/6/98