PD-91799A
IRG4CH40SB
IRG4CH40SB IGBT Die in Wafer Form
C
1200 V
Size 4
Standard Speed
6" Wafer
G
E
Electrical Characteristics ( Wafer Form )
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
Description
Guaranteed (Min/Max)
Test Conditions
IC = 10A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 250µA, VGE = 0V
VGE = VCE , TJ =25°C, IC =250µA
TJ = 25°C, VCE = 1200V
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
4.5V Max.
1200V Min.
3.0V Min., 6.0V Max.
300 µA Max.
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
IGES
±11 µA Max.
TJ = 25°C, VGE = +/- 20V
Mechanical Data
Nominal Backmetal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Cr-NiV-Ag ( 1kA-2kA-2.5kA )
99% Al, 1% Si (4 microns)
0.170" x 0.243"
Wafer Diameter:
150mm, with std. < 100 > flat
.015" + / -.003"
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5242
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300C
Ink Dot Location
Recommended Storage Environment:
Recommended Die Attach Conditions
Reference Standard IR packaged part ( for design ) : IRG4PH40S
NOTES:
Die Outline
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
2. CONTROLLING DIMENSION: (INCH).
3. LETTER DESIGNATION:
S = SOURCE
G = GATE
SK = SOURCE KELVIN
IS = CURRENT SENSE
4. DIMENSIONAL TOLERANCES:
BONDING PADS: < 0.635 TOLERANCE = +/- 0.013
WIDTH
&
LENGTH
OVERALL DIE:
WIDTH
&
< (.0250) TOLERANCE = +/- (.0005)
< 0.635 TOLERANCE = +/- 0.025
< (.0250) TOLERANCE = +/- (.0010)
< 1.270 TOLERANCE = +/- 0.102
< (.050) TOLERANCE = +/- (.004)
< 0.635 TOLERANCE = +/- 0.203
< (.050) TOLERANCE = +/- (.008)
LENGTH
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
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